Document
KSH122 / KSH122I — NPN Silicon Darlington Transistor
November 2013
KSH122 / KSH122I NPN Silicon Darlington Transistor
Features
Description
• D-PAK for Surface Mount Applications • High DC Current Gain
Designed for general-purpose power and switching, such as output or driver stages in applications.
• Built-in Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I ” Suffix)
• Electrically Similar to Popular TIP122
• Complement to KSH127
Applications
• Switching Regulators • Converters • Power Amplifiers
Equivalent Circuit C
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
B
R1
3 ≅ LΩ 3 ≅ LΩ
R2 E
Ordering Information
Part Number KSH122TF KSH122TM KSH122ITU
Top Mark KSH122 KSH122 KSH122-I
Package TO-252 3L (DPAK) TO-252 3L (DPAK) TO-251 3L (IPAK)
Packing Method Tape and Reel Tape and Reel Rail
© 2002 Fairchild Semiconductor Corporation
KSH122 / KSH122I Rev. 1.1.0
1
www.fairchildsemi.com
KSH122 / KSH122I — NPN Silicon Darlington Transistor
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol VCBO VCEO VEBO IC ICP IB
PC
TJ TSTG
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (TA=25°C) Junction Temperature Storage Temperature
Value 100 100 5 8 16 120 20.00 1.75 150
- 65 to 150
Unit V V V A A mA
W
°C °C
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
VCEO(sus)
Collector-Emitter Sustaining Voltage(1)
ICEO ICBO IEBO
Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current
hFE
DC Current Gain(1)
VCE(sat)
Collector-Emitter Saturation Voltage(1)
VBE(sat) VBE(on)
Cob
Base-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1)
Output Capacitance
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Conditions
IC = 30 mA, IB = 0
VCE = 50 V, IB =0 VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 VCE = 4 V, IC = 4 A VCE = 4 V, VEB = 8 A IC = 4 A, IB = 16 mA IC = 8 A, IB = 80 mA IC = 8 A, IB = 80 mA VCE = 4 V, IC = 4 A VCB = 10 V, IE = 0, f = 0.1 MHz
Min. 100
1000 100
Typ. Max. Unit
V
10
μA
10
μA
2
mA
12000
2 V
4
4.5
V
2.8
V
200 pF
© 2002 Fairchild Semiconductor Corporation
KSH122 / KSH122I Rev. 1.1.0
2
www.fairchildsemi.com
KSH122 / KSH122I — NPN Silicon Darlington Transistor
Typical Performance Characteristics
10k VCE = 4V
1k
hFE, DC CURRENT GAIN
Cob[pF], CAPACITANCE
100
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 1. DC Current G.