isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 2500-4500@ IC= -3A ·Collector-Em...
isc Silicon
PNP Darlington Power
Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 2500-4500@ IC= -3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
-12
A
IB
Base Current- Continuous
Collector Power Dissipation
PC
@TC=25℃ Collector Power Dissipation
@Ta=25℃
Tj
Junction Temperature
-0.3
A
70 W
2
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.785 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 63.5 ℃/W
KT0718
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -16mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A, IB= -30mA
VBE(on) Base-Emitter On Voltage
IC= -4A; VCE= -4V
ICBO
Collector Cutoff Current
VCB= -100V, IE= 0
IC...