KTA968A

isc Silicon PNP Power Transistor KTA968A DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type KTC2238A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 25 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS -55~150 ℃ SYMBOL PARAMETER Rth j-a Thermal Resistance, Junction to Ambient MAX 63 UNIT ℃/W THERMAL CHARACTERISTICS isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KTA968A ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IB= 0 -180 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -180 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -1.5 V VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -5V -1.0 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 -1.0 μA IEBO Emitter Cutoff Current VEB= ...