isc Silicon PNP Power Transistor
KTA968A
DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -180V(Min)
·Good...
isc Silicon
PNP Power
Transistor
KTA968A
DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -180V(Min)
·Good Linearity of hFE ·Complement to Type KTC2238A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-180
V
VCEO Collector-Emitter Voltage
-180
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1.5
A
25
W
150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
-55~150 ℃
SYMBOL
PARAMETER
Rth j-a Thermal Resistance, Junction to Ambient
MAX 63
UNIT ℃/W
THERMAL CHARACTERISTICS
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isc Silicon
PNP Power
Transistor
KTA968A
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
IC= -0.1mA; IB= 0
-180
V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0
-180
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
-5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
-1.5
V
VBE(on) Base-Emitter On Voltage
IC= -0.5A; VCE= -5V
-1.0
V
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
-1.0 μA
IEBO
Emitter Cutoff Current
VEB= ...