KTC2026

isc Silicon NPN Power Transistors DESCRIPTION ·Low Saturation Voltage- : VCE(sat)=1.0V(Max)@ (IC= 2A, IB= 0.2A) ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Complement to Type KTA1046 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature Tstg Storage Temperature Range 60 V 7 V 3 A 0.5 A 25 W 2 150 ℃ -55~150 ℃ KTC2026 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 10V,ftest= 1MHz fT Current-Gain—Bandwidth Product Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 0.5A ; VCE= 5V IC= 2.0A ,IB1= -IB2= 0.2A  hFE Cl...