KTC4369

isc Silicon NPN Power Transistors DESCRIPTION ·Low Saturation Voltage- : VCE(sat)=0.8V(Max)@ (IC= 2A, IB= 0.2A) ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 30V(Min) ·Complement to Type KTA1658 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 30 V 5 V 3 A 0.3 A 15 W 150 ℃ -55~150 ℃ KTC4369 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors KTC4369 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 2V ICBO Collector Cutoff Current VCB= 20V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 2V hFE-2 DC Current Gain IC= 2.5A ; VCE= 2V COB Output Capacitance IE= 0 ; VCB= 10V,ftest= 1MHz fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 2V MIN TYP MAX UNIT 30 V 0.8 V 1.0 V 1 uA 1 uA 70 240 25 35 pF 100 MHz  h...