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MD1803DFP Dataheets PDF



Part Number MD1803DFP
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet MD1803DFP DatasheetMD1803DFP Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION · Low base-drive requirements · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for TV ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 10 V IC Collector Curren.

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isc Silicon NPN Power Transistor DESCRIPTION · Low base-drive requirements · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for TV ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current- Continuous 10 A ICM Collector peak current (tp<5ms) 15 A IB Base Current- Continuous 5 A PTOT Total dissipation at TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.125 ℃/W MD1803DFP isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Eollector-base breakdown Voltage IC= 700mA; IC= 0 VCE(sat)(1) Collector-Emitter Saturation Voltage IC= 5.0A; IB=1.25A VBE(sat)(1) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 5.0A; IB=1.25A VCB= 1500V ; IE= 0 VCB= 1500V ; IE= 0 ,TC=125 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE-1 (1) DC Current Gain IC= 1A ; VCE= 5V hFE-2(1) DC Current Gain IC= 5A ; VCE= 1V hFE-3(1) DC Current Gain IC= 5A ; VCE= 5V Vf Diode forward voltage IF= 5A Switching times ts Inductive load Storage Time tf Fall Time ICP= 4A , IB(on))= 0.6A ; fH= 16kHz VBE(Off)=-2.7V, LBB(OFF)=4.5uH 1. Pulsed duration =300us,duty cycle ≤1.5% MD1803DFP MIN TYP. MAX UNIT 10 V 2 V 1.2 V 0.2 2 mA 40 120 mA 18 5 5.5 7.5 1.6 v 2.5 3 μs 0.3 0.6 μs isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MD1803DFP Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 3 isc & iscsemi is registered trademark .


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