MJ3001

MJ2500-MJ2501-PNP MJ3000-MJ3001-NPN High-reliability discrete products and engineering services since 1977 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Collector-Emitter voltage Collector-Base voltage Emitter-Base voltage Collector-Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance, Junction to Case Symbol VCEO VCB VEB IC IB PD TJ, Tstg RӨJC MJ2500 MJ3000 60 60 5.0 10 0.2 150 0.857 -55 to +200 1.17 MJ2501 MJ3001 80 80 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Characteristics Symbol Min Max OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) MJ2500, MJ3000 (IC = 100mA, IB = 0) MJ2501, MJ3001 V(BR)CEO 60 - 80 - Collector-Emitter Leakage Current (VEB = 60V, RBE = 1.0kΩ) MJ2500, MJ3000 - 1.0 (VEB = 80V, RBE = 1.0kΩ) MJ2501, MJ3001 ICER - 1.0 (VEB = 60V, RBE = 1.0kΩ, TC = 150°C) MJ2500, MJ3000 - 5.0 (VEB = 80V, RBE = 1.0kΩ, TC = 150°C) MJ2501, MJ3001 - 5.0 Emitter Cutoff Current (VBE = 5.0V, IC = 0) IEBO - 2.0 Collector-Emitter Leakage Current (VCE = 30V, IB = 0) MJ2500, MJ3000 ICEO - 1.0 (VCE = 40V, IB = 0) MJ2501, MJ3001 - 1.0 ON CHARACTERISTICS(1) DC Current Ga...