MJ10004

MJ10004-MJ10005 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Collector emitter voltage Collector emitter voltage Collector emitter voltage Emitter base voltage Collector current-Continuous -Peak Base current Total power dissipation @ TC = 25°C Total power dissipation @ TC = 100°C Derate above 25°C Operating and storage temperature range Thermal resistance, junction to case Symbol VCEV VCEX(sus) VCEO(sus) VEBO IC ICM IB PD TJ, Tstg RѲJC MJ10004 MJ10005 450 500 400 450 350 400 8.0 20 30 2.5 175 100 1.0 -65 to +200 1.0 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Characteristic Symbol Min Max OFF CHARACTERISTICS Collector emitter sustaining voltage MJ10004 350 - (IC = 250mA, IB = 0, Vclamp = Rated VCEO) MJ10005 VCEO(sus) 400 - Collector cutoff current (VCE = Rated VCEV, RBE = 50Ω, TC = 100°C ) ICER - 5.0 Collector cutoff current (VCEV = Rated VCEV, VBE(off) = 1.5V) (VCEV = Rated VCEV, VBE(off) = 1.5V, TC = 150°C) ICEV - 0.25 - 5.0 Emitter cutoff current (VEB = 2.0V, IC = 0) IEBO - 175 ON CHARACTERISTICS (1) DC current gain (IC = 5.0A, VCE = 5.0V) (IC = 10A, VCE = 5.0V) hFE 50 600 40 400 Collector emitter ...