MJ10015

MJ10015-MJ10016 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristics Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current -continuous -peak Base current Total power dissipation @ TC = 25°C @ TC = 100°C Derate above 25°C Operating and storage junction temperature range Thermal resistance, junction to case Symbol VCEV VCEO(sus) VEBO IC IB PD TJ, Tstg RθJC MJ10015 600 400 8.0 MJ10016 700 500 50 75 10 250 143 1.43 -65 to +200 0.7 ELECTRICAL CHARACTERSITICS (TA = 25°C unless otherwise specified) Characteristics Symbol Min Max OFF CHARACTERISTICS Collector-emitter sustaining voltage (IC = 100mA, IB = 0, Vclamp = Rate VCEO) MJ10015 MJ10015 VCEO(sus) 400 500 Collector-cutoff current (VCEV = Rated Value, VBE(off) = 1.5V) ICEV 0.25 Emitter-cutoff current (VEB = 2.0V, IC = 0) ON CHARACTERISTICS IEBO 350 DC current gain (IC = 20A, VCE = 5.0V) (IC = 40A, VCE = 5.0V) hFE 25 10 Collector-emitter saturation voltage (IC = 20A, IB = 1.0A) VCE(sat) 2.2 (IC = 50A, IB = 10A) 5.0 Base-emitter saturation voltage (IC = 20A, IB = 1.0A) Diode forward voltage (IF = 20A) VBE(sat) VF 2.75 5.0 DYNAMIC CHARACTERISTICS Output capac...