MJ10022

MJ10022-MJ10023 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Collector emitter voltage Collector emitter voltage Emitter base voltage Collector current-Continuous -Peak Base current Total power dissipation @ TC = 25°C Total power dissipation @ TC = 100°C Derate above 25°C Operating and storage temperature range Thermal resistance, junction to case Symbol VCEV VCEO(sus) VEBO IC ICM IB PD TJ, Tstg RѲJC MJ10022 MJ10023 450 600 350 400 8.0 40 80 20 250 143 1.43 -65 to +200 0.7 Unit V V V A A W W W/°C °C °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector emitter sustaining voltage (IC = 100mA, IB = 0, Vclamp = Rated VCEO) Collector cutoff current (VCE = Rated VCEV, RBE = 50Ω, TC = 100°C ) MJ10022 350 MJ10023 VCEO(sus) 400 ICER - Collector cutoff current (VCEV = Rated VCEV, VBE(off) = 1.5V) (VCEV = Rated VCEV, VBE(off) = 1.5V, TC = 150°C) ICEV - - Emitter cutoff current (VEB = 2.0V, IC = 0) ON CHARACTERISTICS (1) IEBO - DC current gain (IC = 10A, VCE = 5.0V) Collector emitter saturation voltage (IC = 20A, IB = 1.0A) (IC = 40A, IB = 5.0A) (IC = 20A, IB = 1.0mA,...