MJ11014

MJ11012, MJ11014, MJ11016 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Collector emitter voltage Collector base voltage Emitter base voltage Collector current Base current Total device dissipation @ TC = 25°C Derate above 25°C @ TC = 100° C Operating and storage temperature range Thermal resistance, junction to case Maximum lead temperature for soldering purposes for ≤ 10s Symbol VCEO VCBO VEBO IC IB PD TJ, Tstg RѲJC TL MJ11012 60 60 MJ11014 MJ11016 90 120 90 120 5 30 1 200 1.15 -55 to +200 0.87 275 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Characteristic Symbol Min Max OFF CHARACTERISTICS Collector emitter breakdown voltage (1) MJ11012 60 - IC = 100mA, IB = 0 MJ11014 V(BR)CEO 90 - MJ11016 120 - Collector emitter leakage current VCE = 60V, RBE = 1kΩ VCE = 90V, RBE = 1kΩ VCE = 120V, RBE = 1kΩ VCE = 60V, RBE = 1kΩ, TC = 150°C VCE = 90V, RBE = 1kΩ, T C = 150°C VCE = 120V, RBE = 1kΩ, TC = 150°C MJ11012 - 1 MJ11014 - 1 MJ11016 ICER - 1 MJ11012 - 5 MJ11014 - 5 MJ11016 - 5 Emitter cutoff current VBE = 5V, IC = 0 IEBO - 5 Collector emitter leakage current VCE = 50V, IB = 0 ON CHARACTERISTICS ...