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MJ11016 Dataheets PDF



Part Number MJ11016
Manufacturers DIGITRON
Logo DIGITRON
Description NPN Transistor
Datasheet MJ11016 DatasheetMJ11016 Datasheet (PDF)

MJ11012, MJ11014, MJ11016 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Collector emitter voltage Collector base voltage Emitter base voltage Collector current Base current Total device .

  MJ11016   MJ11016



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MJ11012, MJ11014, MJ11016 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Collector emitter voltage Collector base voltage Emitter base voltage Collector current Base current Total device dissipation @ TC = 25°C Derate above 25°C @ TC = 100° C Operating and storage temperature range Thermal resistance, junction to case Maximum lead temperature for soldering purposes for ≤ 10s Symbol VCEO VCBO VEBO IC IB PD TJ, Tstg RѲJC TL MJ11012 60 60 MJ11014 MJ11016 90 120 90 120 5 30 1 200 1.15 -55 to +200 0.87 275 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Characteristic Symbol Min Max OFF CHARACTERISTICS Collector emitter breakdown voltage (1) MJ11012 60 - IC = 100mA, IB = 0 MJ11014 V(BR)CEO 90 - MJ11016 120 - Collector emitter leakage current VCE = 60V, RBE = 1kΩ VCE = 90V, RBE = 1kΩ VCE = 120V, RBE = 1kΩ VCE = 60V, RBE = 1kΩ, TC = 150°C VCE = 90V, RBE = 1kΩ, T C = 150°C VCE = 120V, RBE = 1kΩ, TC = 150°C MJ11012 - 1 MJ11014 - 1 MJ11016 ICER - 1 MJ11012 - 5 MJ11014 - 5 MJ11016 - 5 Emitter cutoff current VBE = 5V, IC = 0 IEBO - 5 Collector emitter leakage current VCE = 50V, IB = 0 ON CHARACTERISTICS (1) ICEO - 1 DC current gain IC = 20A, VCE = 5V IC = 30A, VCE = 5V hFE 1000 - 200 - Collector emitter saturation voltage IC = 20A, IB = 200mA IC = 30A, IB = 300mA VCE(sat) - 3 - 4 Base emitter saturation voltage IC = 20A, IB = 200mA IC = 30A, IB = 300mA VBE(sat) - 3.5 - 5 Unit V V V A A W W/°C °C °C/W °C Unit V mA mA mA - V V Rev. 20150723 High-reliability discrete products and engineering services since 1977 Characteristic DYNAMIC CHARACTERISTICS Current gain bandwidth product IC = 10A, VCE = 3V, f = 1MHz Note 1: Pulse test: Pulse width = 300µs, duty cycle ≤ 2.0%. MECHANICAL CHARACTERISTICS Case TO-3 Marking Alpha-numeric Polarity See below MJ11012, MJ11014, MJ11016 NPN SILICON POWER DARLINGTON TRANSISTORS Symbol Min Max Unit hfe 4 - MHz Rev. 20150723 High-reliability discrete products and engineering services since 1977 MJ11012, MJ11014, MJ11016 NPN SILICON POWER DARLINGTON TRANSISTORS Rev. 20150723 .


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