Document
MJ11012, MJ11014, MJ11016
High-reliability discrete products and engineering services since 1977
NPN SILICON POWER DARLINGTON TRANSISTORS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
Base current
Total device dissipation @ TC = 25°C Derate above 25°C @ TC = 100° C
Operating and storage temperature range
Thermal resistance, junction to case
Maximum lead temperature for soldering purposes for ≤ 10s
Symbol VCEO VCBO VEBO IC IB PD
TJ, Tstg RѲJC TL
MJ11012 60 60
MJ11014
MJ11016
90
120
90
120
5
30
1
200 1.15
-55 to +200
0.87
275
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Collector emitter breakdown voltage (1)
MJ11012
60
-
IC = 100mA, IB = 0
MJ11014
V(BR)CEO
90
-
MJ11016
120
-
Collector emitter leakage current VCE = 60V, RBE = 1kΩ VCE = 90V, RBE = 1kΩ VCE = 120V, RBE = 1kΩ VCE = 60V, RBE = 1kΩ, TC = 150°C
VCE = 90V, RBE = 1kΩ, T C = 150°C VCE = 120V, RBE = 1kΩ, TC = 150°C
MJ11012
-
1
MJ11014
-
1
MJ11016
ICER
-
1
MJ11012
-
5
MJ11014
-
5
MJ11016
-
5
Emitter cutoff current VBE = 5V, IC = 0
IEBO
-
5
Collector emitter leakage current VCE = 50V, IB = 0
ON CHARACTERISTICS (1)
ICEO
-
1
DC current gain IC = 20A, VCE = 5V IC = 30A, VCE = 5V
hFE
1000
-
200
-
Collector emitter saturation voltage IC = 20A, IB = 200mA IC = 30A, IB = 300mA
VCE(sat)
-
3
-
4
Base emitter saturation voltage IC = 20A, IB = 200mA IC = 30A, IB = 300mA
VBE(sat)
-
3.5
-
5
Unit V V V A A W
W/°C °C
°C/W °C
Unit
V
mA
mA mA
-
V
V
Rev. 20150723
High-reliability discrete products and engineering services since 1977
Characteristic
DYNAMIC CHARACTERISTICS
Current gain bandwidth product IC = 10A, VCE = 3V, f = 1MHz
Note 1: Pulse test: Pulse width = 300µs, duty cycle ≤ 2.0%.
MECHANICAL CHARACTERISTICS
Case
TO-3
Marking
Alpha-numeric
Polarity
See below
MJ11012, MJ11014, MJ11016
NPN SILICON POWER DARLINGTON TRANSISTORS
Symbol
Min
Max
Unit
hfe
4
-
MHz
Rev. 20150723
High-reliability discrete products and engineering services since 1977
MJ11012, MJ11014, MJ11016
NPN SILICON POWER DARLINGTON TRANSISTORS
Rev. 20150723
.