MJ11029

MJ11028, MJ11030, MJ11032 – NPN MJ11029, MJ11031, MJ11033 – PNP High-reliability discrete products and engineering services since 1977 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Collector-emitter voltage Collector-base voltage Emitter-base voltage Continuous collector current Peak collector current Continuous base current Total device dissipation @ TC = 25°C Derate above 25°C @ TC = 100°C Operating and storage temperature range Maximum lead temperature for soldering purposes ≤ 10s Thermal resistance, junction to case Symbol VCEO VCBO VEBO IC ICM IB PD TJ , Tstg TL RѲJC MJ11028 MJ11029 60 60 MJ11030 MJ11031 90 90 5 50 100 2 300 1.71 -55 to +200 275 0.584 MJ11032 MJ11033 120 120 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Characteristics Symbol Min Max OFF CHARACTERISTICS Collector- emitter breakdown voltage (1) IC = 100mA, IB = 0 Collector emitter leakage current VCE = 60V, RBE = 1kΩ VCE = 90V, RBE = 1kΩ VCE = 120V, RBE = 1kΩ VCE = 60V, RBE = 1kΩ, TC = 150¯C VCE = 90V, RBE = 1kΩ, TC = 150¯C VCE = 120V, RBE = 1kΩ, TC = 150¯C Emitter cutoff current VBE = 5V, IC = 0 Collector emitter leakage current VCE = 50V, IB = 0 ON CHARACTERISTICS (1) DC current gain IC = 25A, VCE = 5V IC = 50A, VCE = 5V MJ10028, ...