MJ15018

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor MJ15018 DESCRIPTION ·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ignition ·Alternator regulator ·Motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IB PD Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current- Continuous Collector Power Dissipation 200 V 200 V 7 V 4 A 2 A 150 W Tj Max.Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor MJ15018 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.0A ,IB= 0.1A VBE(on) Base-Emitter Saturation Voltage IC= 1.0A ,VCE= 4.0V ICEO Collector Cutoff Current VCE= 150V, IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE=4V hFE-2 DC Current Gain IC= 3A ; VCE=4V MIN MAX UNIT 200 V 1.0 V ...