INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
MJ15020
DESCRIPTION ·With TO-3 packaging ·Very hig...
INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
MJ15020
DESCRIPTION ·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington
transistor with integrated
antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Electronic ignition ·Alternator
regulator ·Motor controls
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC IB PD Tj
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current- Continuous Collector Power Dissipation Max.Junction Temperature
250
V
250
V
7
V
4
A
2
A
150
W
200
℃
Tstg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.17 ℃/W
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INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
MJ15020
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.0A ,IB= 0.1A
VBE(on) Base-Emitter Saturation Voltage
IC= 1.0A ,VCE= 4.0V
ICEO
Collector Cutoff Current
VCE= 200V, IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE=4V
hFE-2
DC Current Gain
IC= 3A ; VCE=4V
MIN
MAX UNIT
250
V
1.0
V
...