isc Silicon PNP Power Transistor
INCHANGE Semiconductor
MJB32C
DESCRIPTION ·Lead formed for surface mount applications...
isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
MJB32C
DESCRIPTION ·Lead formed for surface mount applications(NO suffix) ·Electrically the same as TIP32 series ·Pb-free package are available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·General purpose amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-6
A
ICP
Collector Current-Pulse
-10
A
IB
Base Current
PC
Total Power Dissipation @ Ta=25℃
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-2
A
2
W
65
W
-65~150 ℃
Tstg
Storage Temperature Range
-65~150 ℃
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isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
MJB32C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO * Collector-Emitter Breakdown Voltage IC=- 30mA; IB= 0
VCE(sat)* VBE(on)*
ICEO
Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current
IC=-3A; IB= -0.375A IC=- 3A; VCE=-4V VCE=-60V; IE= 0
IEBO
Emitter Cutoff Current
VEB=-5V; IC= 0
hFE1* hFE2*
DC Current Gain DC Current Gain
IC= -1A; VCE= -4 V IC=- 3A; VCE= -4 V
fT
Current-Gain—Bandwidth Product
*:Pulse test PW≤300us,duty cycle≤2%
IC= -...
