MJD42C1G

isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.5 V(Max)@ IC = -6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-base Voltage -5 V IC Collector Current-Continuous -6 A IB Base Current -2 A Collector Power Dissipation@TC=25℃ 20 PC W Collector Power Dissipation@Ta=25℃ 1.75 Tj Junction Tmperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal Resistance,Junction to Case 6.25 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W MJD42C1G isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors MJD42C1G ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=- 6A ;IB= -0.6A -1.5 V VBE(on) Base-Emitter On Voltage IC= -6A ; VCE= 4V -2 V ICEO Collector Cutoff Current VCE=- 60V; IB=0 -50 µA ICBO Collector Cutoff Current VCB= -100V; IE=0 -20 µA IEBO Emitter Cutoff Curren...