POWER TRANSISTOR. MJE3055 Datasheet

MJE3055 TRANSISTOR. Datasheet pdf. Equivalent

Part MJE3055
Description NPN SILICON POWER TRANSISTOR
Feature MJE3055 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER T.
Manufacture DIGITRON
Datasheet
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MJE3055
MJE3055
High-reliability discrete products
and engineering services since 1977
NPN SILICON POWER TRANSISTOR
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Characteristic
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector-current - continuous
Base-current – continuous
Total device dissipation
Derate above 25°C
Operating and storage junction temperature range
Thermal resistance, junction to case
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
TJ, Tstg
RѲJC
MJE3055
60
70
5
10
6.0
90
0.718
-55 to +150
1.39
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristics
Symbol
Min
Max
ON CHARACTERISTICS
Collector-emitter sustaining voltage (1)
IC = 200mA, IB = 0
VCEO(sus)
60
-
Collector cutoff current
VCE = 30V, IB = 0
ICBO
-
700
Collector cutoff current
VCE = 70V, VEB(off) = 1.5V
VCE = 70V, VEB(off) = 1.5V, TC = 150°C
ICEX
-
1.0
-
5.0
Collector cutoff current
VCE = 70V, IE = 0
VCE = 70V, IE = 0, TC = 150°C
ICBO
-
1.0
-
10
Emitter cutoff current
VEB = 5V, IC = 0
IEBO
-
5.0
OFF CHARACTERISTICS
DC current gain (1)
IC = 4A, VCE = 4V
IC = 10A, VCE = 4V
Collector-emitter saturation voltage (1)
IC = 4A, IB = 0.4A
IC = 10A, IB = 3.3A
hFE
20
70
5.0
-
VCE(sat)
-
1.1
-
8.0
DYNAMIC CHARACTERISTCS
Current gain bandwidth product
IC = 500mA, VCE = 10V, f = 500kHz
Note 1: Pulse test: tp ≤ 300µs, duty cycle ≤ 2.0%.
fT
2.0
-
Unit
V
V
V
A
A
W
W/°C
°C
°C/W
Unit
V
µA
mA
mA
mA
-
V
MHz
Rev. 20150615



MJE3055
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case
TO-127 (ECB)
Marking
Alpha-numeric
Pin out
See below
MJE3055
NPN SILICON POWER TRANSISTOR
TO-127 (ECB)
Inches
Millimeters
Min
Max
Min
Max
A 0.635 0.645 16.130 16.380
B 0.495 0.505 12.570 12.830
C 0.125 0.135 3.180 3.430
D 0.043 0.049 1.090 1.240
F 0.138 0.148 3.510 3.760
G
0.166 BSC
4.220 BSC
H 0.105 0.115 2.670 2.920
J 0.032 0.034 0.813 0.864
K 0.595 0.645 15.110 16.380
M
9° TYP
9° TYP
Q 0.185 0.195 4.700 4.950
R 0.075 0.085 1.910 2.160
U 0.245 0.255 6.220 6.480
V 0.080
-
2.030
-
Rev. 20150615





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