MJE3055

MJE3055 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER TRANSISTOR FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristic Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector-current - continuous Base-current – continuous Total device dissipation Derate above 25°C Operating and storage junction temperature range Thermal resistance, junction to case Symbol VCEO VCBO VEBO IC IB PD TJ, Tstg RѲJC MJE3055 60 70 5 10 6.0 90 0.718 -55 to +150 1.39 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Characteristics Symbol Min Max ON CHARACTERISTICS Collector-emitter sustaining voltage (1) IC = 200mA, IB = 0 VCEO(sus) 60 - Collector cutoff current VCE = 30V, IB = 0 ICBO - 700 Collector cutoff current VCE = 70V, VEB(off) = 1.5V VCE = 70V, VEB(off) = 1.5V, TC = 150°C ICEX - 1.0 - 5.0 Collector cutoff current VCE = 70V, IE = 0 VCE = 70V, IE = 0, TC = 150°C ICBO - 1.0 - 10 Emitter cutoff current VEB = 5V, IC = 0 IEBO - 5.0 OFF CHARACTERISTICS DC current gain (1) IC = 4A, VCE = 4V IC = 10A, VCE = 4V Collector-emitter saturation voltage (1) IC = 4A, IB = 0.4A IC = 10A, IB = 3.3A hFE 20 70 5.0 - VCE(sat) - 1.1 - 8.0 DYNAMIC CHARACTERISTCS Current gain bandwidth product IC = 5...