MJE5742H

isc Silicon NPN Darlington Power Transistor MJE5742H DESCRIPTION ·Collector-Emitter Breakdown Voltage : VCEO= 400V(Min) · Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching Regulators ·Inverters ·Solenoid and relay drivers ·Motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Base Voltage 650 V VCEO(SUS) Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak IB Base Current- Continuous IBM ---Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 16 A 2.5 5 A 80 W -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.56 ℃/W 1.55KΩ 0.94KΩ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 50mA, IB= 0 ICEV Collector Cutoff Current VCEV=650V,Tc=25℃ Tc=100℃ IEBO Emitter Cutoff Current VEB= 8V; IC= 0 MJE5742H MIN TYP. MAX UNIT 400 V 1 5 mA 10 mA hFE DC Current Gain IC= 0.5A; VCE= 5V IC= 4A; VCE= 5V 700 2000 VCE(sat) Collector-Emitter Saturation Voltage V BE(sat) Base-Emitter Saturation Voltage IC= 4A; I...