isc Silicon NPN Power Transistor
MJE18004G
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min) ·High...
isc Silicon
NPN Power
Transistor
MJE18004G
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min) ·High Switching Speed ·G:Pb-Free Package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in 220V line-operated switch mode power
supplies and electronic light ballasts
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current
2
A
IBM
Base Current-Peak
4
A
PD
Total Power Dissipation@TC=25℃
75
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Rresistance,Junction to Case
1.65 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
isc Website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
MJE18004G
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB=0
VCE(sat)-1 VCE(sat)-2
Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
IC= 1 A ;IB= 0.1A TC=125℃
IC= 2A ;IB= 0.4 A TC=125℃
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2.5A ;IB= 0.5 A
VBE(sat)-1 Base-Emitter ...