NPN Transistor. MJE18004G Datasheet

MJE18004G Transistor. Datasheet pdf. Equivalent

Part MJE18004G
Description NPN Transistor
Feature isc Silicon NPN Power Transistor MJE18004G DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)C.
Manufacture INCHANGE
Datasheet
Download MJE18004G Datasheet

isc Silicon NPN Power Transistor MJE18004G DESCRIPTION ·Co MJE18004G Datasheet
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MJE18004G
isc Silicon NPN Power Transistor
MJE18004G
DESCRIPTION
·Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min)
·High Switching Speed
·G:Pb-Free Package
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in 220V line-operated switch mode power
supplies and electronic light ballasts
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current
2
A
IBM
Base Current-Peak
4
A
PD
Total Power Dissipation@TC=25
75
W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Rresistance,Junction to Case
1.65 /W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 /W
isc Websitewww.iscsemi.com
1 isc & iscsemi is registered trademark



MJE18004G
isc Silicon NPN Power Transistor
MJE18004G
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB=0
VCE(sat)-1
VCE(sat)-2
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
IC= 1 A ;IB= 0.1A
TC=125
IC= 2A ;IB= 0.4 A
TC=125
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2.5A ;IB= 0.5 A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
450
V
0.5
0.6
V
0.45
0.8
V
0.75 V
1.1
V
VBE(sat)-2 Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 2A; IB= 0.4A
VCES= RatedVCES;VEB= 0
TC=125
VCES= 800V TC=125
VCE= RatedVCEO; IB= 0
1.25 V
0.1
0.5
mA
0.1
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 9V; IC= 0
0.1 mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 2.5V
12
hFE-2
DC Current Gain
IC= 0.3A ; VCE= 5V
14
34
hFE-3
DC Current Gain
IC= 2A ; VCE= 1V
6
hFE-4
DC Current Gain
IC= 10mA; VCE= 5V
10
fT
Current-Gain—Bandwidth Product IC= 0.5A;VCE= 10V;ftest=1.0MHz
13
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.0MHz
50
MHz
pF
Switching Times Resistive Load
ton
Turn-on Time
tS
Storage Time
tf
Turn-off Time
VCC=250V ,IC=2.5A
IB1=IB2=0.5 A
450 800 ns
2.0 3.0 μs
275 400 ns
isc Websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





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