MJH6284

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJH6284 DESCRIPTION ·With TO-3PN packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Complement to Type MJH6287 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous 100 V 100 V 5 V 20 A 40 A 0.5 A PC Collector Power Dissipation Tj Max.Junction Temperature 160 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.78 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJH6284 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0 VCE(sat)1 Collector-Emitter Saturation Voltage IC= 10A ,IB= 40mA VCE(sat)2 Collector-Emitter Saturation Voltage IC= 20A ,IB= 200mA VBE(sat) Base-Emitter Saturation Voltage IC= 20A ,IB= 200mA VBE(on)...