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MJW18020G Dataheets PDF



Part Number MJW18020G
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet MJW18020G DatasheetMJW18020G Datasheet (PDF)

isc Silicon NPN Power Transistor MJW18020G DESCRIPTION ·With TO-247 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage .

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isc Silicon NPN Power Transistor MJW18020G DESCRIPTION ·With TO-247 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9.0 V IC Collector Current-Continuous 45 A IB Base Current 10 A PC Collector Power Dissipation@TC=25℃ 250 W TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.5 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=10A; IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC=20A; IB= 4A VBE(sat)-1 Base-Emitter Saturation Voltage IC=10A; IB= 2A VBE(sat)-2 Base-Emitter Saturation Voltage IC=20A; IB= 4A ICEO Collector Cutoff Current VCE= 800V; IB=0 ICBO Collector Cutoff Current VCB= 1500V; IE=0 hFE-1 DC Current Gain IC= 3A; VCE= 5V hFE-2 DC Current Gain IC= 10A; VCE= 2V hFE-3 DC Current Gain IC= 20A; VCE= 2V hFE-4 DC Current Gain IC= 10mA; VCE= 5V MJW18020G MIN MAX UNIT 450 V 1000 V 9.0 V 0.6 V 1.5 V 1.25 V 1.5 V 1.0 mA 2.0 mA 14 34 8 5.5 14 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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