isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·With TO-3PN packaging ·Very high DC current gain ·Monolithic d...
isc Silicon
PNP Darlington Power
Transistor
DESCRIPTION ·With TO-3PN packaging ·Very high DC current gain ·Monolithic darlington
transistor with integrated
antiparallel collector-emitter diode ·Complement to type MJH6284 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator
regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IB
Base Current
-1
A
PC
Collector Power Dissipation
150
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
0.78 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
MP1620
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0
VCE(sat)1 Collector-Emitter Saturation Voltage IC= -7A ,IB= -7mA
VBE(sat) Base-Emitter Saturation Voltage
IC=- 7A ,IB= -7mA
ICBO
Collector Cutoff Current
VCB=-160V, IE= 0
ICEO
Collector Cutoff Current
VCE=-150V, IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC...
