MPSA14

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor MPSA14 DESCRIPTION ·With TO-92 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM PT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation 30 V 30 V 10 V 0.5 A 1.0 A 1.5 W Tj Max.Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 83.3 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor MPSA14 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=0.1A ,IB= 0.1mA VBE(on) Base-Emitter on Voltage IC=0.1A ,VCE=5V ICBO Collector Cutoff Current VCB=30V, IE= 0 IEBO Emitter Cutoff Current VEB= 10V; IC= 0 hFE-1 DC Current Gain IC= 10mA ; VCE= 5V hFE-2 DC Current Gain IC= 0.1A ; VCE= 5V MIN MAX UNIT 30 V 1.5 V 2.0 ...