isc Silicon NPN Power Transistor
DESCRIPTION ·With TO-252(DPAK) packaging ·Reliable performance at higher powers ·Desig...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·With TO-252(DPAK) packaging ·Reliable performance at higher powers ·Designed for inductive loads ·Fast switching speed ·Very low current requirements ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Internal combustion engine ignition control ·Switching
regulators ·Motor controls ·Light ballast ·Photo flash
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
700
V
VCEO Collector-Emitter Voltage
350
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Max.Collector Current-Continuous
8
A
IB
Base Current-Continuous
PD
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
0.5
A
45
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
NJD35N04T4G
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVCBO Collector-Base Breakdown Voltage IC=0.1mA; IE=0
BVCEO Collector-Emitter Breakdown Voltage IC=10mA; IB=0
BVEBO Emitter-Base Breakdown Voltage
IE=0.1mA;IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC=2A; IB=20mA
VBE(sat) Collector-Emitter Saturation Voltage IC=2A; IB=20mA
VBE(on) Collector-Emitter On Voltage
IC=2A;VCE=2.0V
ICEO
Collector Cutoff Current
VCE= 300V; IB= 0
ICES
Collector Cutoff Current
VCB= 500V;IB= 0
IEBO
Emitter Cu...
