isc Silicon PNP Power Transistors
DESCRIPTION ·With TO-3PN packaging ·Reliable performance at higher powers ·Accurate r...
isc Silicon
PNP Power
Transistors
DESCRIPTION ·With TO-3PN packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
regulators ·High frequency inverters ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-250
VCEO VCEX VEBO
Collector-Emitter Voltage
Collector-Emitter Voltage VEB= 5V
Emitter-Base Voltage
-250 -250
-5
IC
Collector Current-Continuous
-15
ICM
Collector Current-Peak
-30
IB
Base Current-Continuous
-1.6
PT
Total Power Dissipation @ TC=25℃
200
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT V V V V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.63 ℃/W
INCHANGE Semiconductor
NJW1302G
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistors
INCHANGE Semiconductor
NJW1302G
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=- 100mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB=- 0.8A
VBE(on) Base-Emitter On Voltage
IC= -8A;VCE= -5V
ICBO
Collector Cutoff Current
VCB=- 250V
ICEO
Collector Cutoff Current
VCE=- 250V
IEBO
Emitter Cutoff Current
VEB=- 5V
hFE-1
...