isc Silicon NPN Power Transistors
DESCRIPTION ·With TO-3PN packaging ·Reliable performance at higher powers ·Accurate r...
isc Silicon
NPN Power
Transistors
DESCRIPTION ·With TO-3PN packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
regulators ·High frequency inverters ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
250
VCEO
Collector-Emitter Voltage
250
VCEX
Collector-Emitter Voltage VEB= 5V
250
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
15
ICM
Collector Current-Peak
30
IB
Base Current-Continuous
1.6
PT
Total Power Dissipation @ TC=25℃
200
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT V V V V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 0.63 ℃/W
INCHANGE Semiconductor
NJW3281G
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistors
NJW3281G
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-Emitter Sustaining Voltage
VCE(sat) Collector-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
hFE-3
DC Current Gain
hFE-4
DC Current Gain
hFE-5
DC C...
