ON4832

isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ·High Gain ︱S21︱2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range ON4832 VALUE 20 15 2.5 120 0.5 150 -65~150 UNIT V V V mA W ℃ ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor ON4832 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 15 V ICBO Collector Cutoff Current VCB= 8V; IE= 0 0.05 μA hFE DC Current Gain IC=40mA ; VCE= 8V 60 250 fT Current-Gain—Bandwidth Product IC= 40mA ; VCE= 8V; f= 1MHz 9 GHz Cre Feedback Capacitance IE= 0 ; VCB= 8V; f= 1MHz 0.5 pF Ce Emitter capacitance IC=iC=0,VEB=0.5V,f=1MHz 2.0 pF CC Collector capacitance IE=ie=0,VCB=8V,f=1MHz 0.9 pF ︱S21︱2 Insertion Power Gain IC= 40mA ; VCE= 8V; f= 900MHz 15 16 dB NF Noise Figure IC= 10mA ; VCE= 8V; f= 900MHz IC= 40mA ; VCE= 8V; f= 900MHz...