PMBT3904

isc Silicon NPN Transistor INCHANGE Semiconductor PMBT3904 DESCRIPTION ·NPN switching transistor in a SOT23 plastic package ·PNP complement:PMBT3906 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for telephony and professional communication equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 100 mA ICM Peak Collector Current PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature 200 mA 0.25 W -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor INCHANGE Semiconductor PMBT3904 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT IEBO Emitter Cutoff Current VEB= 6V; IC= 0 50 nA ICBO Collector Cutoff Current VCB= 30V; IE= 0 50 nA hFE-1 DC Current Gain IC= 10mA ; VCE=1 V 100 300 hFE-2 DC Current Gain IC= 50mA ; VCE=1 V 60 hFE-3 DC Current Gain IC= 100mA ; VCE=1 V 30 VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA 0.3 V VBE(sat) Base-Emitter Saturation Voltage IC= 50mA; IB= 5mA 0.95 V COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz 0.35 pF fT Current-Gain—Bandwidth Product Switching times td Delay Time tr Rise Time tstg...