ST901T

isc Silicon NPN Darlington Power Transistor ST901T DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitino for small engines ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Collector Current 4 A ICM Collector Current-peak 8 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.5 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 5.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ST901T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 350 V VCE(sat) Collector-Emitter Saturation Voltage IC=2A; IB= 20mA 1.3 V V BE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain IC=2A; IB= 20mA VCB=500V; IE= 0 VCB= 500V; IE= 0;Tj= 125℃ VCB=350V; IE= 0 VCB=350V; IE= 0;Tj= 125℃ VEB= 5V; IC= 0 IC= 2A; VCE= 2V IC= 4A; VCE= 2V 1500 500 1.8 V 0.1 0.5 ...