TIP31A

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat) = 1.2V(Max.)@IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 60V(Min) ·Complement to Type TIP32A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO IC ICM IB PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current Collector Power Dissipation TC=25℃ Junction Temperature Storage Ttemperature Range 5 V 3 A 5 A 1 A 40 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.125 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W TIP31A isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V ICES Collector Cutoff Current VCE= 60V; VEB= 0 ICEO Collector Cutoff Current VCE= 30V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE=...