TIP34C

isc Silicon PNP Power Transistor TIP34C DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@IC = -1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·Complement to Type TIP33C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -10 A ICM Collector Current-peak -15 A IB Base Current -3 A PC Collector Power Dissipation@ TC=25℃ 80 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.56 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TIP34C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2.5A VBE(on)-1 Base-Emitter On Voltage IC= -3A; VCE= -4V VBE(on)-2 Base-Emitter On Voltage IC= -10A; VCE= -4V ICEO Collector Cutoff Current VCE= -60V; IB= 0 ICES Collector Cutoff Current ...