isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining V...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min) ·Complement to Type TIP36B ·Current Gain-Bandwidth Product-
: fT= 3.0MHz(Min)@IC= 1.0A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
25
A
ICM
Collector Current-peak
40
A
IB
Base Current
5
A
PC
Collector Power Dissipation@ TC=25℃
125
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~150 ℃ MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0
℃/W
TIP35B
isc website:www.iscsemi.cn
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 5A
VBE(on)-1 Base-Emitter On Voltage
IC= 15A; VCE= 4V
VBE(on)-2 Base-Emitter On Voltage
IC= 25A; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0...