TIP35B

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Complement to Type TIP36B ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= 1.0A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 25 A ICM Collector Current-peak 40 A IB Base Current 5 A PC Collector Power Dissipation@ TC=25℃ 125 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W TIP35B isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 5A VBE(on)-1 Base-Emitter On Voltage IC= 15A; VCE= 4V VBE(on)-2 Base-Emitter On Voltage IC= 25A; VCE= 4V ICEO Collector Cutoff Current VCE= 60V; IB= 0...