TIP147F

isc Silicon PNP Darlington Power Transistor TIP147F DESCRIPTION ·High DC Current Gain ·Monolithic construction with built in Base-Emitter shunt resistors ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type TIP142F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -0.5 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.56 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A ,IB= -10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A ,IB= -40mA VBE(sat) Base-Emitter Saturation Voltage V BE(on) Base-Emitter On Voltage IC= -10A ,IB= -40mA IC= -10A ; VCE= -4V ICBO Collect...