NPN Transistor. TIP152 Datasheet

TIP152 Transistor. Datasheet pdf. Equivalent

Part TIP152
Description NPN Transistor
Feature isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(B.
Manufacture INCHANGE
Datasheet
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TIP152
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min.)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max.)@ IC= 5A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in automotive ignition,switching and motor
control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
10
A
IB
Base Current- Continuous
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
1.5
A
80
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.56 /W
TIP152
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TIP152
isc Silicon NPN Darlington Power Transistor
TIP152
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0
MIN TYP. MAX UNIT
400
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1.0mA, IE= 0
400
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A, IB= 10mA
1.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A, IB= 100mA
1.5
V
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 5A, IB= 250mA
2.0
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 2A, IB= 100mA
2.2
V
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 5A, IB= 250mA
2.3
V
VF
C-E Diode Forward Voltage
IF= 7A
3.5
V
ICEO
Collector Cutoff current
VCE= 400V, IB= 0
0.25 mA
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
15
mA
hFE-1
DC Current Gain
IC= 2.5A; VCE= 5V
150
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
50
hFE-3
DC Current Gain
IC= 7A; VCE= 5V
15
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
150 pF
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





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