TIP152

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in automotive ignition,switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1.5 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.56 ℃/W TIP152 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TIP152 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 MIN TYP. MAX UNIT 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1.0mA, IE= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A, IB= 10mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A, IB= 100mA 1.5 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 5A, IB= 250mA 2.0 ...