isc Silicon NPN Darlington Power Transistor
FEATURES ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 550V(Min.) ·Min...
isc Silicon
NPN Darlington Power
Transistor
FEATURES ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 550V(Min.) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Rugged Triple-duffused planar construction
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Peak collector current
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
1200
V
550
V
10
V
4
A
8
A
75
W
150
℃
-65~150 ℃
TIPL760C
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isc Silicon
NPN Power
Transistor
TIPL760C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO ICBO ICE O
Collector-Emitter Breakdown Voltage Base Cutoff current Collector Cutoff current
IC= 10mA
VCB= 1200V, IE = 0 VCB= 1200V, IE = 0 TC = 100°C VCE= 550V, IE= 0
IEBO
Emitter Cutoff current
VCE (sat) Collector-Emitter Saturation Voltage
VBE (sat) Base-Emitter Saturation Voltage
VEB= 10V, IC= 0
IC= 2A, IB= 0.4A IC= 3A, IB= 0.6A
IC= 2A, IB= 0.4A IC= 3A, IB= 0.6A
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
MIN
TYP.
MAX
UNI T
550
V
50
µA
200
50
µA
1
mA
1.0 2.5
V
1.2 1.4
V
20
60
ft
Current gain bandwidth product
VCE = 10 V IC = 0.5 A f = 1 MHz
12
MHZ
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