isc Silicon NPN Power Transistor
TT2142
DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Damper Diode ·Minimu...
isc Silicon
NPN Power
Transistor
TT2142
DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
20
A
IB
Base Current
3
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
6
A
65
W
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.92 ℃/W
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4.5A; IB= 0.9A
IEBO
Emitter Cutoff Current
ICES
Collector Cutoff Current
hFE-1
DC Current Gain
VEB= 4V; IC= 0 VCE= 1500V;VBE= 0 IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
TT2142
MIN TYP MAX UNIT
3.0
V
1.5
V
40
130 mA
1.0 mA
10
5
8
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information ...
