TT2170LS

isc Silicon NPN Power Transistor TT2170LS DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Pa Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 12 A 25 W 2 W 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 5.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2.7A; IB= 0.54A VBE(sat) Base-Emitter Saturation Voltage IC= 2.7A; IB= 0.54A IEBO Emitter Cutoff Current ICES Collector Cutoff Current hFE-1 DC Current Gain VEB= 4V; IC= 0 VCE= 800V;VBE= 0 IC= 0.5A; VCE= 5V hFE-2 DC Current Gain IC= 3A; VCE= 5V TT2170LS MIN TYP MAX UNIT 3.0 V 1.5 V 40 130 mA 10 uA 10 5 8 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information c...