NPN Transistor. TT2170LS Datasheet

TT2170LS Transistor. Datasheet pdf. Equivalent

Part TT2170LS
Description NPN Transistor
Feature isc Silicon NPN Power Transistor TT2170LS DESCRIPTION ·High Switching Speed ·High Voltage ·Built-i.
Manufacture INCHANGE
Datasheet
Download TT2170LS Datasheet

Ordering number : ENN7670 TT2170LS NPN Triple Diffused Plan TT2170LS Datasheet
isc Silicon NPN Power Transistor TT2170LS DESCRIPTION ·Hig TT2170LS Datasheet
Recommendation Recommendation Datasheet TT2170LS Datasheet





TT2170LS
isc Silicon NPN Power Transistor
TT2170LS
DESCRIPTION
·High Switching Speed
·High Voltage
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@TC=25
Pa
Collector Power Dissipation
@Ta=25
TJ
Junction Temperature
12
A
25
W
2
W
150
Tstg
Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 5.0 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark



TT2170LS
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.7A; IB= 0.54A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.7A; IB= 0.54A
IEBO
Emitter Cutoff Current
ICES
Collector Cutoff Current
hFE-1
DC Current Gain
VEB= 4V; IC= 0
VCE= 800V;VBE= 0
IC= 0.5A; VCE= 5V
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
TT2170LS
MIN TYP MAX UNIT
3.0
V
1.5
V
40
130 mA
10
uA
10
5
8
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)