TTA1452

isc Silicon PNP Power Transistor TTA1452 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -0.3A ICBO Collector Cutoff Current VCB= -80V ; IE= 0 IEBO Emitter Cutoff Current VEB= -6V ; IC= 0 hFE-1 DC Current Gain IC= -1A ; VCE= -1V hFE-2 DC Current Gain IC= -6A ; VCE= -1V COB Output Capacitance IE= 0; VCB= -10V;ftest= 1MHz fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= -6A ,IB1= -IB2= -0.3A, VCC= -30V, RL=...