isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·Complement to Ty...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·Complement to Type TTA0001 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
18
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
9
A
150
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
TTC0001
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isc Silicon
NPN Power
Transistor
TTC0001
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
160
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 9A; IB= 0.9A
2.0
V
VBE(on)
Base-Emitter On Voltage
IC= 9A ; VCE= 5V
1.5
V
ICBO
Collector Cutoff Current
VCB= 160V ; IE=0
1.0 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
1.0 μA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
80
160
hFE-2
DC Current Gain
IC= 9A ; VCE= 5V
35
COB
Output Capacitance
IE=0 ; VCB= 10V;ftest= 1.0MHz
410
pF
fT
Current-Gain—Bandwidth Product
IC=1A ; VCE= 5V
30
MHz
...
