isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Complement to Type TTA1452B ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·High -current switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
8...
