TTC5200

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type TTA1943 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ TTC5200 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TTC5200 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 7A; VCE= 5V ICBO Collector Cutoff Current VCB= 230V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 7A; VCE= 5V COB Output Capacitance IE=0; VCB= 10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC=1A ; VCE= 5V MIN TYP. MAX UNIT 230 V 3.0 V 1.5 V 5 μA 5 μA 80 160 35 240 pF 30 MHz Notice...