ZXT953K

isc Silicon PNP Power Transistor INCHANGE Semiconductor ZXT953K DESCRIPTION ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers, high-speed inverters , converters ·Other general high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICP Collector Current-Continuous -10 A IB Base Current -0.5 A PC Collector Power Dissipation 4.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor ZXT953K ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Breakdown Voltage IC=-0.1mA; IB=0 BVCEO Collector-Emitter Breakdown Voltage IC=-10mA; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-0.1A; IB= -10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-1.0A; IB= -100mA VCE(sat)-3 Collector-Emitter Saturation Voltage IC=-2.0A; IB= -200mA VCE(sat)-4 Collector-Emitter Saturation Voltage IC=-5.0A; IB= -500mA VBE(sat) Base-Emitter Saturation Voltage IC=-5.0A; IB= -500mA I...