DD160KB160

DD160KB160 Diode Module FEATURES ·High surge current capability ·Isolated mounting base ·High voltage ratings up to 1600V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Battery charges ·DC motor drives ·Various rectifiers ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VRRM Repetitive Peak Reverse Voltage IF(AV) Average Forward Current IF(RMS) R.M.S. Forward Current TC=90℃, 180° conduction, half sine wave IFSM Surge Forward Current I2t I2t for fusing 10ms,half sine wave,VR=0.6VRRM TJ Junction Temperature Tstg Storage Temperature Range Viso Isolation Breakdown Voltage（R.M.S.） VALUE UNIT 1600 V 160 A 250 A 6 KA 184 KA2s -40~150 ℃ -40~125 ℃ 2500 V isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case DD160KB160 Diode Module MAX 0.23 UNIT ℃/W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VFM Forward Voltage drop IRRM Repetitive Peak Reverse Current CONDITIONS IF= 500A Tj＝150℃，VR＝VRRM MAX 1.35 12 UNIT V mA PACKAGE OUTLINE Dimensions in mm (1mm = 0.0394“) NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for us...