LD412060

LD412060 Dual Diode Isolated Module FEATURES ·Electrically Isolated Heatsinking ·Metal Baseplate ·Low Thermal Impedance for Improved Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Battery charges ·AC/DC motor drives ·Power Supplies ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VRRM Repetitive Peak Reverse Voltage IF(AV) Average Forward Current IF(RMS) R.M.S. Forward Current TC=100℃, 180° conduction, sine,50Hz IFSM Surge Forward Current I2t I2t for fusing 10ms,half sine wave,VR=0.6VRRM Tj=150℃ TJ Junction Temperature Tstg Storage Temperature Range Viso Isolation Breakdown Voltage（R.M.S.） VALUE UNIT 2000 V 600 A 1256 A 18 KA 1650 KA2s -40~150 ℃ -40~150 ℃ 2500 V isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case LD412060 Dual Diode Isolated Module MAX 0.08 UNIT ℃/W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VFM Forward Voltage drop IRRM Repetitive Peak Reverse Current CONDITIONS IFM=1500A VR＝VRRM,Tj＝150℃ MAX 1.18 40 UNIT V mA PACKAGE OUTLINE Dimensions in mm (1mm = 0.0394“) NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electroni...