15ETU12

Ultrafast Rectifier INCHANGE Semiconductor 15ETU12 FEATURES ·1200V blocking voltage ·Ultrafast recovery time ·Optimized forward voltage drop ·Designed and qualified for industrial level ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The devices are intended for use in boost stage in the AC/DC section of SMPS, high frequency output rectification of battery charger, inverters of solar inverters, or as freewheeling diodes in motor drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current @Tc=100℃ IFSM Non- repetitive peak surge current TJ Junction Temperature Tstg Storage Temperature Range VALUE UNIT 1200 V 15 A 150 A -55~150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Ultrafast Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case INCHANGE Semiconductor 15ETU12 MAX 1.3 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX VF Maximum Instantaneous Forward Voltage IF=15A ;Tj=25℃ 2.2 IR Maximum Instantaneous Reverse Current VR= VR rated VR= VR rated Tj=125℃ 80 150 trr Maximum Reverse Recovery Time IF = 15 A; dIF/dt = 100 A/μs VR = 390 V 167 UNIT V μA ns NOTICE： ISC reserves the rights to make changes of the c...