Ultrafast Rectifier
Ultra fast Rectifier
INCHANGE Semiconductor
40EPF04
FEATURES ·With TO-247 packaging ·High performance fast recovery di...
Description
Ultra fast Rectifier
INCHANGE Semiconductor
40EPF04
FEATURES ·With TO-247 packaging ·High performance fast recovery diode ·Low loss and soft recovery ·Low forward voltage drop ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·Power switching circuits ·General purpose
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRWM
VR
IF(AV)
IFSM
TJ
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current @Tc=106℃
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase,)
Junction Temperature
Tstg
Storage Temperature Range
50HZ 60HZ
VALUE
UNIT
400
V
40
A
400 475
A
-40~150
℃
-40~150
℃
isc website:www.iscsemi.com
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Ultra fast Rectifier
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
INCHANGE Semiconductor
40EPF04
MAX 0.60 40
UNIT ℃/W ℃/W
ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VF
Maximum Instantaneous Forward Voltage
IF=40A;Tc=25℃ Tc=125℃
1.25 1.10
V
IR
Maximum Instantaneous Reverse Current
VR= VRWM;Tj=25℃ VR= VRWM;Tj=150℃
trr
Maximum Reverse Recovery Time
IF =40A;diF/dt=25A/μs
0.1 70
mA
180
ns
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