60EPF02

Ultra fast Rectifier INCHANGE Semiconductor 60EPF02 FEATURES ·With TO-247 packaging ·High performance fast recovery diode ·Low loss and soft recovery ·Low forward voltage drop ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuits ·General purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFSM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current @Tc=106℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 50Hz) TJ Junction Temperature Tstg Storage Temperature Range VALUE UNIT 200 V 60 A 830 A -40~150 ℃ -40~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Ultra fast Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient INCHANGE Semiconductor 60EPF02 MAX 0.40 40 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF Maximum Instantaneous Forward Voltage IF=60A 1.3 V IR Maximum Instantaneous Reverse Current VR= VRWM;Tj=25℃ VR= VRWM;Tj=150℃ trr Maximum Reverse Recovery Time IF =60A;diF/dt=25A/μs 0.1 50 mA 180 ns NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without ...