Ultrafast Rectifier
Ultrafast Rectifier
INCHANGE Semiconductor
BY239-800
FEATURES ·High surge current capability ·Popular TO-220 package ·...
Description
Ultrafast Rectifier
INCHANGE Semiconductor
BY239-800
FEATURES ·High surge current capability ·Popular TO-220 package ·Low forward voltage drop ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·Power switching circuits ·General purpose
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current @Tc=100℃
IFRM
Surge non repetitive forward current tp=10ms sinusoidal
Ptot
Power dissipation @Tc=100℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
800
V
10
A
140
A
12.5
W
-40~125 ℃
-40~125 ℃
isc website:www.iscsemi.com
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Ultrafast Rectifier
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
INCHANGE Semiconductor
BY239-800
MAX 2
UNIT ℃/W
ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%)
SYMBOL
PARAMETER
CONDITIONS
MAX
VF
Maximum Instantaneous Forward Voltage IF=30A ;Tj=25℃
1.45
IR
Maximum Instantaneous Reverse Current VR= VRWM;Tj=150℃
500
UNIT V μA
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equi...
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