BYC30X-600P

Ultra fast Rectifier INCHANGE Semiconductor BYC30X-600P FEATURES ·With TO-220F packaging ·High performance fast recovery diode ·Low loss and soft recovery ·High current capability ·Low reverse leakage current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuits ·General purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current @Tc=100℃ VALUE UNIT 600 V 30 A IFRM Repetitive Peak Forward Current 60 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- wave, single phase, 50Hz) 200 A TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Ultra fast Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case INCHANGE Semiconductor BYC30X-600P MAX 3.5 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF Maximum Instantaneous Forward Voltage IF=30A;Tj=25℃ IF=30A;Tj=150℃ IR Maximum Instantaneous Reverse Current VR= VRWM;Tj=25℃ VR= VRWM;Tj=150℃ trr Maximum Reverse Recovery Time IF =15A;VR=30V;dIF/dt=50A/μs 2.75 1.80 V 10 600 μA 35 ns NOTICE： ISC reserves the rights to make...